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Overview

Band-structure and doping of semiconductors. Drift-Diffusion Equations; Density of states; Fermi function; Law of Mass Action. PN Junctions: Derivation of I-V characteristics. PN Junctions: Capacitance; Breakdown; Non-idealities. Bipolar Junction Transistor (BJT): Operation principles. BJT: Derivation of I-V characteristics. BJT: Ebers-Moll model; Non-idealities. MOSFET: Derivation of I-V characteristics. MOSFET: Structure; Threshold Voltage; Enhancement- & Depletion-mode. Microwave devices. Transistors for Digital Logic: TTL, ECL, CMOS. Optoelectronic & Photonic Devices: Direct Vs Indirect Band-gap devices. LEDs; Semiconductor Lasers; Photovoltaic Cells. Principles and key technologies involved in microfabrication of integrated circuits. Microfabrication of: MOSFETs; CMOS; BJTs.

Study Level

Postgraduate

Offering Terms

Term 3

Campus

Kensington

Delivery Mode

Fully on-site

Indicative contact hours

5

Course Outline

To access course outline, please visit:

Fees

Pre-2019 Handbook Editions

Access past handbook editions (2018 and prior)

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